Stackable non-volatile resistive switching memory device and method

ABSTRACT

A memory device includes a first plurality of memory cells arranged in a first crossbar array, a first thickness of dielectric material overlying the first plurality of memory cells, and a second plurality of memory cells arranged in a second crossbar array overlying the first thickness of dielectric material. The memory device further includes a second thickness of dielectric material overlying the second plurality of memory cells. In a specific embodiment, the memory device further includes a Nth thickness of dielectric material overlying an Nth plurality of memory cells, where N is an integer ranging from 3 to 8.

CROSS REFERENCE TO RELATED APPLICATIONS

The present application claims priority to and is a continuation of U.S.patent application Ser. No. 13/679,976, filed Nov. 16, 2012, which is adivision of U.S. patent application Ser. No. 12/861,650, filed Aug. 23,2010, all of which are incorporated by reference herein in theirentirety.

BACKGROUND

The present invention is generally related to resistive switchingdevices. More particularly, embodiments according to the presentinvention provide a method and a structure for forming a stacked orvertically stacked resistive switching device. The present invention canbe applied to non-volatile memory devices but it should be recognizedthat the present invention can have a much broader range ofapplicability

The success of semiconductor devices has been mainly driven by anintensive transistor down-scaling process. However, as field effecttransistors (FET) approach sizes less than 100 nm, problems such as theshort channel effect degrade device performance. Moreover, such sub 100nm device size can lead to sub-threshold slope non-scaling and alsoincreases power dissipation. It is generally believed thattransistor-based memories such as those commonly known as Flash mayapproach an end to scaling within a decade. Flash memory is one type ofnon-volatile memory device.

Other non-volatile random access memory (RAM) devices such asferroelectric RAM (Fe RAM), magneto-resistive RAM (MRAM), organic RAM(ORAM), and phase change RAM (PCRAM), among others, have been exploredas next generation memory devices. These devices often require newmaterials and device structures to couple with silicon-based devices toform a memory cell, which lack one or more key attributes. For example,Fe-RAM and MRAM devices have fast switching characteristics and goodprogramming endurance, but their fabrication is not CMOS compatible andsize is usually large. Switching for a PCRAM device requires largeamounts of power. Organic RAM or ORAM is incompatible with large volumesilicon-based fabrication and device reliability is usually poor.

From the above, a new semiconductor device structure and integration isdesirable.

BRIEF SUMMARY OF THE PRESENT INVENTION

The present invention is generally related to resistive switchingdevices. More particularly, embodiments according to the presentinvention provide a method and a structure for forming a stacked orvertically stacked resistive switching device. The present invention canbe applied to non-volatile memory devices but it should be recognizedthat the present invention can have a much broader range ofapplicability

In a specific embodiment, a method of forming a vertically-stackedmemory device is provided. The method includes providing a semiconductorsubstrate having a surface region. A first dielectric material is formedoverlying the surface region of the semiconductor substrate. The methodincludes forming a first plurality of memory cells overlying the firstdielectric material. In a specific embodiment, each of the firstplurality of memory cells including at least a first top metal wiringstructure spatially extending in a first direction, a first bottomwiring structure spatially extending in a second direction orthogonal tothe first top metal wiring structure, a first switching elementsandwiched between an intersection region of the first electrodestructure and the second electrode structure. In a specific embodiment,the method includes forming a thickness of second dielectric materialoverlying the first plurality of memory cells including the top wiringstructures. In a specific embodiment, the method forms a secondplurality of memory cells overlying the second dielectric material, eachof the second plurality of memory cells comprising at least a second topmetal wiring structure extending in the first direction, and a secondbottom wiring structure arranged spatially orthogonal to the second topmetal wiring structure, and a second switching element sandwichedbetween the second top wiring structure and the second bottom wiringstructure. More pluralities of memory cells may be formed above thesetwo layers. As used herein, the term “vertical or vertically” is not inreference to gravity but in reference to a major plane of a substratestructure or the like.

In a specific embodiment, a memory device is provided. The memory deviceincludes a first plurality of memory cells arranged in a first crossbararray. A first thickness of dielectric material overlies the firstplurality of memory cells, and a second plurality of memory cellsarranged in a second crossbar array overly the first thickness ofdielectric material. In certain embodiment, the memory device caninclude three to eight layers of cell array. Each of the cell array isseparated from a next using a thickness of dielectric material in aspecific embodiment.

Many benefits can be achieved by ways of the present invention. Forexample, the present method forms a vertically stacked memory device toprovide for a high density device structure using existing CMOSprocessing equipment and techniques. In certain embodiments, the presentmethod provides arrays of interconnected memory cells with diodesteering elements to decrease die size and enhance memory cellperformance. Depending on the embodiment, one or more of these benefitsmay be achieved. One skilled in the art would recognize othervariations, modifications, and alternatives.

SUMMARY OF THE DRAWINGS

FIGS. 1-16 are simplified diagram illustrating a method of forming aresistive switching device according to an embodiment of the presentinvention

FIGS. 17-18 are simplified diagram illustrating a method of forming avertically stacked memory device structure according to an embodiment ofthe present invention.

DETAILED DESCRIPTION OF THE PRESENT INVENTION

The present invention is generally related to resistive switchingdevices. More particularly, embodiments according to the presentinvention provide a method and a structure for forming a verticallystacked resistive switching device. The present invention can be appliedto non-volatile memory devices but it should be recognized that thepresent invention can have a much broader range of applicability

The memory function of current non volatile memory devices are based oncharges trapped in a dielectric material or a silicon floating gate.However, scaling of such charge-trap based materials is limited. Forexample, floating gate devices such as NOR or NAND devices have featuresizes of approximately 10F² and 4.5F², respectively, where F is thesmallest feature size. Embodiments according to the present inventionprovide a method to form a non-volatile resistive switching device inlayers which can be vertically stacked on top of one another to increasedevice density and to achieve an effective cell size of less than 4F².Additionally, fabrication of the memory device is fully compatible withcurrent CMOS processes.

FIGS. 1-16 illustrate a method of fabricating a resistive switchingdevice according to an embodiment of the present invention. The methodincludes providing a substrate 102 including a surface region 104. Thesubstrate can be a semiconductor substrate such as a silicon wafer andthe like. In certain embodiments, the substrate can include one or moredevices formed thereon. The one or more devices can include transistordevices or others, depending on the embodiment. As shown in FIG. 2, themethod includes forming a first dielectric material 202 overlying thesurface region of the substrate. The first dielectric material can be asilicon oxide or a silicon nitride or a suitable dielectric film stackincluding a combination of different dielectric films. The firstdielectric material can be formed using techniques such as chemicalvapor deposition, spin on coating, including a combination of thesetechniques, and others.

Referring to FIG. 3, the method deposits a first adhesion layer 302overlying the first dielectric material. The first adhesion layer can betitanium, titanium nitride, tantalum, tantalum nitride, or tungstennitride, or any combinations of these material, and others. The firstadhesion layer may be formed using physical vapor deposition, chemicalvapor deposition, or atomic layer deposition, and the like. In otherapplications, physical deposition such as sputtering may be useddepending on the application. As shown in FIG. 4, a bottom wiringmaterial 402 is formed overlying the first adhesion layer. The bottomwiring structure material can be aluminum, tungsten, copper, or othersuitable metal materials depending on the embodiment. The bottom wiringmaterial can be deposited using techniques such as physical vapordeposition, evaporation, chemical vapor deposition, electrochemicalmethods such as electroplating or electrode-less deposition from aliquid medium, or other suitable deposition techniques including acombination. The first adhesion layer provides a glue layer for thefirst wiring material and the first dielectric material in a specificembodiment.

As shown in FIG. 5, the method of forming the switching device includesdepositing a second adhesion layer 502 overlying the bottom wiringstructure material. The second adhesion layer can also be a barrierlayer or a blocking layer to prevent chemical reaction of the bottomwiring structure material with, for example, a switching layer materialsubsequently formed. The second adhesion layer can be titanium, titaniumnitride, tantalum, tantalum nitride, tungsten, tungsten nitride, orothers, depending on the embodiment.

Referring to FIG. 6, the method includes forming a doped semiconductormaterial 802 overlying the second adhesion layer in a specificembodiment. The doped semiconductor material can be dopedpolycrystalline silicon, hereafter referred to as polysilicon materialin a specific embodiment. The polysilicon material is used as a contactmaterial between the bottom wiring material and an amorphous siliconswitching material in a specific embodiment. In a preferred embodiment,the doped polysilicon material is p⁺ doped, using impurity such as boronand the like. In a specific embodiment, the boron has a concentrationranging from about 1E18 to 1E21 cm⁻³. The p+ polycrystalline siliconmaterial can be deposited using a chemical deposition method or aphysical deposition method depending on the embodiment. The chemicaldeposition method can include a chemical vapor deposition process usingsilane, disilane, a suitable chlorosilane, or any suitablesilicon-containing gas as a precursor, and any suitable gas containing ap+ dopant for silicon, such as diborane, B₂H₆. In a specific embodiment,the p+ polycrystalline silicon material may be deposited using aplasma-assisted chemical deposition method. Deposition temperature forthe p+ silicon material can range from about 200 Degree Celsius to about500 Degree Celsius and preferably at about 400 Degree Celsius to about450 Degree Celsius. In certain embodiments, the polysilicon material maybe further processed to enhance the performance of the switching device.For example, defects or nano metal material may be formed in a surfaceregion of the doped polysilicon material to enhance the performance ofthe switching device. In a specific embodiment, the polysilicon materialallows for controlling and improving switching properties of theamorphous silicon switching material. For other switching materials,such as metal oxide, or others, other contact material may be used, orthe contact layer may not be needed. Of course, one skilled in the artwould recognize other variations, modifications, and alternatives.

In a specific embodiment, the method forms a switching material 702overlying the contact material as shown in FIG. 7. The switchingmaterial can be an undoped amorphous silicon material having anintrinsic semiconductor characteristic. The undoped amorphous siliconmaterial can be deposited using a chemical deposition method or aphysical deposition method depending on the embodiment. The chemicaldeposition method can include a chemical vapor deposition process usingsilane, disilane, a suitable chlorosilane, or any suitablesilicon-containing gas as a precursor. In a specific embodiment, theundoped amorphous silicon material may be deposited using aplasma-assisted chemical deposition method. Deposition temperature forthe amorphous silicon material can range from about 1500 Degree Celsiusto about 450 Degree Celsius and preferably at about 350 Degree Celsiusto about 400 Degree Celsius. Depending on the embodiment, the amorphoussilicon material can be provided at a thickness ranging from about 50Angstroms to about 1000 Angstroms. In a preferred embodiment, theamorphous silicon material is provided at a thickness ranging from about200 Angstroms to about 700 Angstroms.

Referring to FIG. 8, the method includes forming a mask 802 overlyingthe switching material. The masking layer can be a suitable organicphotoresist material, or an inorganic hard mask, or a combination of thetwo, depending on the embodiment. The hard mask can be formed from adielectric material such as silicon oxide or silicon nitride, or othersdepending on the application. The hard mask may also be a metal ordielectric hard mask depending on the embodiment.

In a specific embodiment, the method subjects the switching material,the contact material, and the bottom wiring structure material to afirst etching process using the masking layer as a mask to form a firststructure 902 as shown in FIG. 9. The first etching process selectivelyremoves a portion of the first dielectric material exposing a topsurface region 908 of the first dielectric material. The first structureincludes at least a bottom wiring structure 904, and a switching element906 in a specific embodiment. The switching element includes at least afirst side region 910. Depending on the hard mask used, any remainingportion of the hard mask after etching may be removed. Alternatively,the remaining hard mask after etch may be left intact if it is adielectric.

Referring to FIG. 10, the method includes depositing a second dielectriclayer overlying the first structure and exposed portion of the firstdielectric layer. The second dielectric layer can include a siliconoxide material or silicon nitride material or a combination depending onthe embodiment, or any suitable dielectric material depending on theapplication. In a specific embodiment, the second dielectric layer canbe silicon oxide deposited using a high density plasma enhanced chemicalvapor deposition process, commonly known as HDP, using silane and oxygenas precursors. The silicon dioxide may also be deposited by a plasmaenhanced deposition process (PECVD) using tetramethlyoxsilicate,commonly known as TEOS. The silicon oxide material may also be formedusing a spin on coating technique followed by a suitable curing process.Or a combination of coating and chemical deposition may also be useddepending on the application.

In a specific embodiment, the method employs a planarizing process toform a planarized dielectric surface 1102 as illustrated in FIG. 11.This may be accomplished by a chemical mechanical polishing process, ora non isotropic chemical etch, for example, a blanket etch of the seconddielectric material in a specific embodiment. As shown, a portion 1104of the second dielectric material is maintained overlying a top regionof the switching element in a specific embodiment. In a specificembodiment, the method includes forming a first opening region 1202 in aportion of the second dielectric material to expose a portion of the topregion of the switching element as shown in FIG. 12. The first openingregion is formed by using a second patterning and etching process in aspecific embodiment. The first opening region has a first dimension in aspecific embodiment. For example for silicon dioxide as the dielectricmaterial, the etching process may be a dry etch, such as afluorine-based etching using CF₄, SF₆, or NF₃, as the etching gas. Asuitable wet etching technique, such as a HF-based etching may also beused depending on the embodiment. Alternatively, laser ablation may beused to selectively remove the silicon oxide material overlying theswitching material to form the first opening region.

In a specific embodiment, the method includes forming a third dielectricmaterial 1302 overlying the second dielectric layer including the firstopening region as shown in FIG. 13. As shown, the third dielectricmaterial is conformably formed overlying the second dielectric layer andthe first opening region in a specific embodiment. The third dielectricmaterial can be silicon nitride in a specific embodiment. Other suitabledielectric materials such as silicon oxide or a dielectric stack (forexample, a silicon oxide on silicon nitride on silicon oxide stack,commonly known as ONO) may also be used depending on the embodiment.

Referring to FIG. 14, the method subjects the third dielectric materialto a nonconformal or an anisotropic etching process to remove a portionof the third dielectric material to form a second opening region 1402.As shown, the anisotropic etching process forms a side wall structure1404 overlying the side region of the first opening region and a bottomregion. The bottom region includes an exposed portion of the switchingmaterial in a specific embodiment. This etch is commonly used insemiconductor processing, and is known as a “sidewall spacer” etch. Theexposed portion has a second dimension, which is less than the firstdimension.

Referring to FIG. 15, the method forms a conductive material 1502overlying at least the bottom region and the side wall structure. Theconductive material can substantially fills the second opening regionand in contact with the switching material in a specific embodiment.Alternatively, the conductive material can be conformably formedoverlying the second opening region including the bottom region and theside wall structure depending on the deposition conditions. Theconductive material is in contact with the switching element, as shown.In a specific embodiment, for an amorphous silicon switching material,the conductive material can be a silver material. The silver materialcan be deposited using a physical deposition process such as sputteringor evaporation. The silver material may also be formed using a chemicaldeposition process such as chemical vapor deposition, electrochemicalsuch as electroplating or electroless plating, or a combinationdepending on the application.

In a specific embodiment, the method includes forming a top barriermaterial 1602 overlying at least the conductive material and a topwiring material 1604 overlying the top barrier material as illustratedin FIG. 16 in a specific embodiment. The top barrier material can be atop adhesion material in a specific embodiment. The top barrier materialcan be titanium, titanium nitride, tantalum or tantalum nitride,tungsten, or tungsten nitride, or any suitable barrier materialdepending on the embodiment. Depending on the application, top barrierlayer 1602 can be formed using a chemical deposition such as atomiclayer deposition, chemical vapor deposition, and others, or a physicaldeposition such as sputtering, depending on the application. Top barriermaterial 1602 can protect the conductive material, for example, thesilver material from oxidation in a specific embodiment. Top barriermaterial can also be a diffusion barrier between the conductive materialand the top wiring material in a specific embodiment.

Again, depending on the embodiment, the top wiring material can bealuminum, tungsten, copper, or others. The top wiring structure materialmay be deposited using techniques such as physical vapor depositionprocess, for example, sputtering, evaporation, and others. The topwiring material may also be deposited using chemical deposition such aschemical vapor deposition, electrochemically including electroplatingand electrodeless deposition depending on the embodiment.

In a specific embodiment, the method subjects a stack of materialcomprising the top wiring material, the top barrier material, and thecontact material to a third pattern and etch process to from a topwiring structure. In a specific embodiment, the conductive material isin contact with the switching element. The top wiring structure isconfigured spatially at an angle to the bottom wiring structure to forma cross bar structure in a specific embodiment. In a specificembodiment, the top wiring structure is configured spatially orthogonalto the bottom wiring structure. The switching element is disposed in anintersection region of the top electrode structure and the bottomelectrode structure. As merely an example, for a switching device usingan amorphous silicon material as the switching material, the stack ofmaterial can comprise of aluminum, titanium nitride, and silver, whilesilver is in contact with the amorphous silicon material. Of course onskilled in the art would recognize other variations, modifications, andalternatives.

The above sequence of steps provides a method of forming a first arrayof memory cells for a vertically stacked device according to anembodiment of the present invention. The method forms a fourthdielectric material 1702 overlying the top wiring structure of firstarray of memory cells. The fourth dielectric material 1702 further fillsin any gaps between the top interconnect wires. As shown, two memorycells are illustrated in the first array of memory cells. The firstarray of memory cells can have an X by Y array arranged in a crossbarconfiguration, where X and Y are integers and X>1, and Y>1. In aspecific embodiment, fourth dielectric material 1702 can be siliconoxide, silicon nitride, or a dielectric stack with alternatingdielectric materials, depending on the application. As shown, fourthdielectric material 1702 forms a thickness 1704 overlying the firstarray of memory cells. In a specific embodiment, the fourth dielectricmaterial is subjected to a planarizing process to form a planarizedsurface region.

The method forms a second array of memory cells overlying the planarizedfourth dielectric material as shown in FIG. 18. The second array ofmemory cells includes a plurality of memory cells. Each of the pluralityof memory cells includes at least a second top electrode, a secondbottom electrode, and a switching element sandwiched between the secondtop electrode and the second bottom electrode in a specific embodiment.The second top electrode extends in a direction parallel to the firsttop electrode in a specific embodiment. In a specific embodiment, thesecond bottom electrode and the second top electrode are spatiallyarranged at an angle, and preferably orthogonal to each other in acrossbar configuration. The method than repeats the above steps offorming a memory array and dielectric material stack to form avertically stacked memory device. For example, a four layers of memorycell array result in an effective memory cell size of 1F², where F isthe feature size of a memory cell. In certain embodiment, each of thememory cells in an array can have an incipient diode to prevent programand read disturbs when selecting a device in an interconnecting array.In contrast to conventional configuration, the CMOS circuitry forprogramming the memory devices is beneath the layers of memory cellarrays. Therefore, the CMOS devices do not occupy additional area on thesubstrate. Vertical stacking as illustrated in FIG. 8 allows for a highdensity device and a small die size.

Referring again to FIG. 17. Depending on the embodiment, the method canform a plurality of via structures 1706 in a portion of the firstdielectric material to connect the first array of memory cells withrespective read, write, or erase circuitry provided by respectivetransistor devices on the semiconductor substrate. Via structure 1706may connect the first top wiring structure or the first bottom wiringlayer. In FIG. 17, the via structure connects to the first top wirelayer. The via structure can be formed using a pattern and etch processto form an interconnect structure. In a specific embodiment, the methodincludes depositing an adhesion layer conformally formed overlying thevia opening and an interconnect metal material overlying the adhesionlayer to fill the plurality of via openings. The adhesion layer can betitanium, titanium nitride or tungsten nitride depending on theembodiment. The interconnect metal material can be tungsten, aluminum,copper or other suitable material. A metal planarizing process may beperformed to remove the metal interconnect material from the dielectricsurface in a specific embodiment. Alternatively, the via may be filledand metal deposited on top of the oxide 1704. This metal may bepatterned and etched to form the bottom wire layer for the next layer ofmemory array. As shown, the via structure can be formed in an end regionof each of the top wiring structure or the bottom wiring structure.

Though the present invention has been described using various examplesand embodiments, it is also understood that the examples and embodimentsdescribed herein are for illustrative purposes only and that variousmodifications or alternatives in light thereof will be suggested topersons skilled in the art and are to be included within the spirit andpurview of this application and scope of the appended claims.

What is claimed is:
 1. A memory device, comprising: a first plurality ofmemory cells arranged in a first crossbar array; a first thickness ofdielectric material overlying the first plurality of memory cells; and asecond plurality of memory cells arranged in a second crossbar arrayoverlying the first thickness of dielectric material.
 2. The memorydevice of claim 1 further comprises a second thickness of dielectricmaterial overlying the second plurality of memory cells.
 3. The memorydevice of claim 1 further comprises a Nth thickness of dielectricmaterial overlying the Nth plurality of memory cells, where N is aninteger ranging from 3 to 8.